to-126 plastic-encapsulate transistors ksd1691 transistor (npn) features z low collector-emitter saturation voltage & large collector current z high power dissipation: pc = 1.3w (ta=25c) maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 7 v i c collector current (dc) 5 a collector power dissipation (t a = 25 ) 1.3 w p c collector power dissipation (t c = 25 ) 20 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp max u nit collector-base breakdown voltage v (br)cbo i c =100 a,i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 60 v emitter-base breakdown voltage v (br)ebo i e =100 a,i c =0 7 v collector cut-off current i cbo v cb =50v,i e =0 10 a emitter cut-off current i ebo v eb =7v,i c =0 10 a h fe(1) v ce =1v,i c =2a 100 400 h fe(2) v ce =1v,i c =0.1a 60 dc current gain h fe(3) v ce =1v,i c =5a 50 collector-emitter saturation voltage v ce(sat) i c =2a,i b =0.2a 0.3 v base-emitter saturation voltage v be(sat) i c =2a,i b =0.2a 1.2 v turn on time t on 1 s storage time t stg 2.5 s fall time t f v cc = 10v, i c = 2a , i b1 =-i b2 =0.2a,r l =5 ? 1 s classification of h fe(1) rank o y g range 100-200 160-320 200-400 to-126 1. emitter 2. collector 3. base 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,jun,2011
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